page 1 NPT2022 nds - 038 rev. 2, 072313 g a ll i u m n i tr i d e 4 8 v , 100 w , dc - 2 ghz hemt built using the sigantic ? process - a proprietary gan - on - silicon technology dc - 2 ghz 100w gan hemt s ym b ol p a r am e t e r min t y p m a x u n i t s g ss sm al l - sig nal g ain - 19 - db p sat s a t u r a t e d o u tp ut p o w e r - 50.5 - d bm ? sat efficiency at s a t u r a t e d o u tp ut p o w e r - 64 - % g p g ain at p out = 100w - 17 - db ? drain e f f i c ie n c y at p out = 100w - 60 - % v ds drain voltage - 48 - v ? ruggedness: output mismatch, all phase angles vswr = 10:1, no device damage rf s p ec i fi c a t ion s ( c w , 900 mh z ) : v ds = 4 8 v , i d q = 600 m a , t c = 2 5 c product description the NPT2022 gan hemt is a wideband transistor optimized for dc - 2 ghz operation. this device has been designed for saturated and linear operation with output power levels to 100w (50 dbm) in an industry standard plastic package with a bolt down flange. f eatures ? suitable for linear and saturated applications ? tunable f r o m dc - 2 g hz ? 48v operation ? industry standard plastic package ? high drain efficiency (>60%) applications ? defense communications ? land mobile radio ? avionics ? wireless infrastructure ? ism applications ? vhf/uhf/l - band radar
page 2 NPT2022 nds - 038 rev. 2, 072313 s ym b ol p a r am e t e r min t y p m a x u n i t s off characteristics i dlk drain - source leakage current (v gs = - 8v, v ds =160v) - - 24 ma i glk gate - source leakage current (v gs = - 8v, v ds =0v) - - 12 ma on characteristics v t gate threshold voltage (v ds =48v, i d =24ma) - 2.5 - 1.5 - 0.5 v v gsq gate quiescent voltage (v ds =48v, i d =600ma) - 2.1 - 1.2 - 0.3 v r on on resistance (v ds =2v, i d =180ma) - 0.2 - ? i d, max maximum drain current (v ds =7v pulsed, 300s pulse width, 0.2% duty cycle) - 14 - a dc s p ec i fi c a t ion s : t c = 2 5 c thermal resistance specification: symbol parameter t yp units r ? jc the r m al r esi s t an c e ( j un c tio n - t o - case ) , t j = 200 c 1.3 c / w ab s ol ut e m a xi m u m r a t in g s : n ot s imul t a neo us, t c = 2 5 c un le s s o the r wis e n o t e d symbol parameter max units v ds d r ai n - so u r c e v o l t a g e 1 6 0 v v g s g a t e - so u r c e v o l t ag e - 1 0 to 3 v i g g a t e cu r re n t 48 ma p t t o t a l d e vi c e p o w e r d i s s ipa tio n ( d er a t e d a b ov e 2 5 c ) 134 w t s tg s t or a g e t emper a t u r e r a ng e - 6 5 to 1 5 0 c t j o per a t i n g j un c tio n t emper a t u r e 2 00 c hbm human body model esd rating (per jesd22 - a114) class 1b msl moisture sensitivity level (per ipc/jedec j - std - 020) msl - 3 junction temperature (t j ) measured using ir microscopy, case temperature (t c ) measured using a thermocouple embedded in heatsink.
page 3 NPT2022 nds - 038 rev. 2, 072313 frequency (mhz) z s ( ? z l ( ? p sat (w) g ss (db) drain efficiency @ p sat (%) 500 1.3 + j0.2 5.8 + j2.0 152 26 71 900 1.1 - j2.2 5.0 + j1.9 139 22 70 1800 1.3 - j6.9 3.2 - j2.5 133 17 66 2000 1.4 - j7.6 2.3 - j3.5 119 16 66 optimum source and load impedances: (cw drain efficiency and output power tradeoff impedance) figure 1: cw power/drain efficiency tradeoff impedances, z o =10 ? load - pull data, reference plane at device leads v ds =48v, i dq =600ma, t c =25 ? c unless otherwise noted figure 2: gain vs. p out figure 3: efficiency vs. p out
page 4 NPT2022 nds - 038 rev. 2, 072313 900 mhz narrowband circuit (cw, v ds =48v, i dq =600ma, t c =25 ? c, unless otherwise noted) figure 4: component placement of 900 mhz narrowband circuit for NPT2022 reference value manufacturer part number c1, c5 1f avx 1210c105kat2a c2, c6 0.1f kemet c1206c104k1ractu c3, c7 0.01f avx 12061c103kat2a c4, c8 1000pf kemet c0805c102k1ractu c9 10pf atc atc800b100b c10 33pf atc atc800b330b c11 15pf atc atc800b150b c12 6.8pf atc atc800b6r8b c13 18pf atc atc800b180b c14 0.8pf atc atc800b0r8b c15 8.2pf atc atc800b8r2b r1 10? panasonic erj - 2rkf10r0x l1 19.4nh coilcraft 0806sq - 19njl l2 ~44nh 20 awg cu wire 4 turn, 5mm id pcb ro4350, ? r =3.5, 0.030 rogers nitronex nbd - 140r2
page 5 NPT2022 nds - 038 rev. 2, 072313 typical performance in 900 mhz narrowband circuit (cw, v ds =48v, i dq =600ma, f=900mhz, t c =25 ? c, unless otherwise noted) figure 6: gain vs. p out figure 8: quiescent v gs vs. temperature figure 9: power de - rating curve (t j = 200c, t c > 25c) figure 5. electrical schematic of 900 mhz narrowband circuit for NPT2022 (for rf tuning details see component placement diagram figure 4) figure 7: drain efficiency vs. p out
page 6 NPT2022 nds - 038 rev. 2, 072313 typical performance in 900 mhz narrowband circuit (cw, v ds =48v, i dq =600ma, f=900mhz, t c =25 ? c, unless otherwise noted) figure 10: 2 - tone imd3 vs. p out vs. i dq (1mhz tone spacing) figure 12: 2 - tone imd vs. p out (1mhz tone spacing) figure 11: 2 - tone gain vs. p out vs. i dq (1mhz tone spacing)
page 7 NPT2022 nds - 038 rev. 2, 072313 130 - 940 mhz broadband circuit (cw, v ds =48v, i dq =600ma, t c =25 ? c, unless otherwise noted) figure 13: component placement of 130 - 940 mhz broadband circuit for NPT2022 reference value manufacturer part number c1 150f nichicon upw1c151med c2, c7 1f avx 1210c105kat2a c3, c6 0.1f kemet c1206c104k1ractu c4, c5 0.01f avx 12061c103kat2a c8 270f united chemi - con elxy 630ell271mk25s c9 18pf atc atc100b180 c10 1000pf atc atc100b102 c11 1.5pf atc atc100b1r5 c12 5.6pf atc atc100b5r6 c13 15pf atc atc100b150 c14 220pf atc 600f221ft c15 12pf atc 600f120ft c16, c17 82pf atc atc100b820 c18 4.7pf atc atc100b4r7 c19 2.4pf atc atc100b2r4 c20 3.9pf atc atc100b3r9 c21 1.0pf atc atc100b1r0 r1 49.9? panasonic erj - 6enf49r9v r2 470? panasonic erj - 1tnf4700u r3 0.33? panasonic erj - 6rqfr33v r4, r5, r6 24.9? panasonic erj - 1tnf24r9u f1 material 73 fair - rite 2673000801 f2, f3 4:1 transformer anaren xmt031b5012 l1 25nh coilcraft 0908sq - 25njl l2, l4 8nh coilcraft a03tjl l3, l5 5nh coilcraft a02tjl pcb ro4350, ? r =3.5, 0.020 rogers nitronex nbd - 128r1
page 8 NPT2022 nds - 038 rev. 2, 072313 typical performance in 130 - 940 mhz broadband circuit (cw, v ds =48v, i dq =600ma, t c =25 ? c, unless otherwise noted) figure 14. electrical schematic of 130 - 940 mhz broadband circuit for NPT2022 (for rf tuning details see component placement diagram figure 13) figure 15: performance vs. frequency at (p out = p sat ) figure 16: performance vs. frequency (p out = 49dbm) figure 17: performance vs. p out (f = 760mhz) figure 18: small signal s - parameters vs. frequency
page 9 NPT2022 nds - 038 rev. 2, 072313 f igur e 19 - to272 - 2 bolt - down plastic package dimensions (all dimensions in inches [millimeters]) function gate rf input drain rf output (cut lead) source ground (flange)
page 10 NPT2022 nds - 038 rev. 2, 072313 n i t r o n e x, llc 2 30 5 p reside n tia l d r i ve d u r h am, n c 2 7 7 0 3 us a + 1 . 9 1 9 . 8 0 7 . 9 1 0 0 ( t elephon e ) + 1 . 9 1 9 . 8 0 7 .92 0 0 ( f a x ) inf o @ ni t ron e x . c o m ww w .ni t ron e x . c om a d d i t iona l i n f o r ma t io n t h i s pa r t i s l ea d - f r e e an d i s c o m p l ian t wi t h th e r o h s dire ct i v e ( r e s tr i ct ion s o n th e use o f ce r t ai n h a z a r d o u s s u b s t an ce s i n e l e ctr i c a l an d e l e ct r oni c e q u i pm en t ). i m po r t an t no t i c e n i t ron e x, llc rese r v e s th e r ig h t to m a k e c o r re c tio ns, m o d i f i c a tio ns, e nhan c eme n t s, i mpr ov eme n t s a n d o the r c h a nge s to i t s pr o du ct s a n d se r vi c e s at a n y t i m e a n d to d is c o n t in u e a n y pr o du c t o r se r vi c e w i tho ut n o ti c e . cust ome r s s ho u l d o b t ain t h e la t e st rel ev a n t inf o r m a tio n b e f or e p la c i n g orde r s a n d s ho u l d v e r i f y t hat su c h inf o r m a tio n i s c u r re n t a n d c ompl et e . a ll pr o du ct s a r e sol d su bje c t to n i tron e x t e r m s a n d c on di tio ns of s a l e su pp l ie d at th e t i m e of orde r a ck n o w ledgme n t . th e la t e st inf o r m a t i o n f ro m n i tron e x c an b e f o u n d e i the r b y c a lli n g n i tron e x at 1 - 9 1 9 - 8 0 7 - 9 1 0 0 o r vis i t i n g o ur w ebs i t e at ww w .ni t ron e x . c o m. n i t ron e x w a r r a n t s pe r f o r m an c e of i t s pa c k age d semi c on du c t o r o r d i e to th e s pe c i f i c a tio ns a pp l i c a bl e at th e t i m e of sal e in a c c or dan c e w i t h n i tron e x s t a n da r d w a r r a n t y . t e s t i n g a n d o the r quali t y c o n tro l t e c hn i q ue s a r e u se d to th e e x t e n t n i t ron e x deem s ne c e s s a r y to su p- po r t th e w a r r a n t y . e x c e p t wher e m a n da t e d b y g ov e r n me n t re qu ireme n t s, t e s t i n g of all pa r a m et e r s of e a c h pr o du c t i s n ot ne c e s sa r i ly pe r f o r me d . n i t ron e x a s su me s n o l i a bi li t y f o r a pp l i c a tio ns a s si s t an c e o r c ust ome r pr o du c t desig n . cust ome r s a r e re s po n s i bl e f o r t hei r pr o du c t a n d a pp l i c a tio ns u s i n g n i tron e x semi c on du c t o r pr o du ct s o r se r vi c e s. t o m ini m i z e th e r i s k s a s so c i a t e d w i t h c ust ome r pr o du ct s a n d a pp l i c a- tio ns, c ust ome r s s ho u l d pr o vid e a de qua t e desig n a n d oper a t i n g s af eg u ar ds. n i t ron e x d o e s n ot w a r r a n t o r represe n t t hat a n y l i c e n s e , e i the r e xpre s s o r i mp l ie d , i s gr a nt e d u nde r a n y n i tron e x pa t e n t r ig h t , c o p y r ig h t , m ask w o r k r ig h t , o r o the r n i tron e x i nt e l le c tual prope r t y r ig h t re la t i n g to a n y c omb ina tio n , m a c hi n e o r pr o c e s s in w h i c h n i t ron e x pr o du ct s o r se r vi c e s a r e u se d . r epr o du c t i o n of inf o r m a tio n in n i tron e x da t a s he e t s i s pe r m i t t e d i f a n d o nly i f s a i d repr o du c tio n doe s n ot al t e r a n y of th e inf o r m a t i o n a n d i s a c c om pan ie d b y all a s s o c i a t e d w a r r a n tie s, c on di tio ns, li m i t a tio ns a n d n o ti c e s. a n y al t er a tio n of th e c o n t ai ne d inf o r m a tio n i nv al i da t e s all w a r r a n tie s a n d n i tron e x i s n ot re s po n s i bl e o r l i a bl e f o r a n y su c h s t a t eme n t s. n i t ron e x pr o du ct s a r e n ot i nt ende d o r au tho r i z e d f o r u s e in l i fe su ppo r t s ys t em s, in c l u di n g but n ot li m i t e d to su r g i c al i mp la n t s i n to t h e b o dy o r a n y o the r a pp l i c a tio n i nt ende d to su ppo r t o r sus t ain l i f e . sho u l d b u y e r p u r c ha s e o r u s e n i t ron e x, llc pr o du ct s f o r a n y su c h uni nt ende d o r unau tho r i z e d a pp l i c a tio n , b u y e r sh a ll i ndem n i f y a n d hol d n i tron e x, llc, i t s o f f i c e r s, empl oy ee s, su bsi d i a r ie s, a f f i l i a t e s, d i s t r ibut o r s, a n d i t s su cc e s so r s h a r mle s s a g ainst all c lai m s, c o s t s, da m a ge s, a n d e xpe n se s, a n d re a so na bl e a t t o r n e y f ee s a r is i n g o ut o f , d ire ct ly o r i n d ire ct l y , a n y c laim of pe r so nal inju r y o r de a t h a s so c i a t e d w i t h su c h uni nt ende d o r unau tho r i z e d u s e , n o t w i t hs t a n di n g i f su c h c laim al lege s t hat n i t ron e x w as neg l ige n t reg a r di n g th e desig n o r m an uf a c tu r e of s a i d pr o du ct s. n i t ron e x a n d t h e n i tron e x l o g o a r e re g i s t ere d tr a dema r k s of n i tron e x, llc . a ll o t he r pr o du c t o r se r vi c e na me s a r e th e prope r t y of thei r re s pe c ti v e o wne r s. ? n i t ron e x, llc 2 0 13 a ll r ig h t s rese r v e d .
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